Wide-band-gap devices (WBG) are becoming increasingly popular in applications traditionally dominated by Si insulated gate bipolar transistors (IGBTs). WBG devices such as SiC and gallium nitride (GaN) offer higher voltage ratings, switching speeds, and increased maximum operating temperatures. [pdf]
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The Drain-Source Voltage (V_DS) represents the maximum voltage that can be applied between the MOSFET’s drain and source terminals without causing damage. For high-power systems, selecting a MOSFET with a sufficient voltage margin is critical to withstand transient spikes and operating conditions. [pdf]
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